STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247
- RS 제품 번호:
- 261-5071
- 제조사 부품 번호:
- STGWA80H65DFBAG
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩288,993.60
일시적 품절
- 2027년 2월 15일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩9,633.12 | ₩288,976.68 |
| 60 - 60 | ₩9,343.60 | ₩280,291.08 |
| 90 + | ₩9,063.48 | ₩271,887.48 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-5071
- 제조사 부품 번호:
- STGWA80H65DFBAG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.8mm | |
| Height | 5mm | |
| Series | STGWA | |
| Width | 21 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.8mm | ||
Height 5mm | ||
Series STGWA | ||
Width 21 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
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