Infineon IGBT, 200 A 750 V TO-247
- RS 제품 번호:
- 248-6656
- 제조사 부품 번호:
- AIKQ200N75CP2XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 240 units)*
₩3,479,654.40
일시적 품절
- 2026년 6월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 240 - 240 | ₩14,498.56 | ₩3,479,519.04 |
| 480 - 480 | ₩14,150.76 | ₩3,396,001.92 |
| 720 + | ₩13,810.48 | ₩3,314,515.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-6656
- 제조사 부품 번호:
- AIKQ200N75CP2XKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Package Type | TO-247 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Width | 15.9 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 41.2mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Package Type TO-247 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Width 15.9 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 41.2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon Automotive IGBT discrete is an EDT2 IGBT with a co-packed diode in the TO247PLUS package, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient, this enables easy paralleling operation, providing system flexibility and power scalability, and the 750 V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins, thus enabling high performant inverter systems.
Self limiting current under short circuit condition
Positive thermal coefficient and very tight parameter distribution for easy paralleling
Excellent current sharing in parallel operation
Smooth switching characteristics, low EMI signature
Low gate charge
Simple gate drive design
High reliability
관련된 링크들
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- Infineon IKQB160N75CP2AKSA1, Type N-Channel IGBT, 200 A 750 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole
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