STMicroelectronics STGYA50M120DF3 IGBT, 50 A 1200 V, 3-Pin, Through Hole
- RS 제품 번호:
- 248-4896
- 제조사 부품 번호:
- STGYA50M120DF3
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩13,981.50
재고있음
- 41 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 1 | ₩13,981.50 |
| 2 - 4 | ₩13,669.50 |
| 5 - 9 | ₩13,318.50 |
| 10 + | ₩13,006.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-4896
- 제조사 부품 번호:
- STGYA50M120DF3
- 제조업체:
- STMicroelectronics
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 535W | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Series | STGYA50M120DF3 | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 535W | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Series STGYA50M120DF3 | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
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