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Infineon FP50R06W2E3BOMA1 IGBT Module 600 V

RS 제품 번호:: 244-5401
제조사 부품 번호:: FP50R06W2E3BOMA1
제조업체:: Infineon

Infineon FP50R06W2E3BOMA1 IGBT Module 600 V

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Subtotal (1 unit)*

₩80,240.00

13 개 단위 배송 준비 완료

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수량	한팩당
1 - 1	₩80,240.00
2 - 2	₩78,620.00
3 - 3	₩77,060.00
4 - 4	₩75,500.00
5 +	₩74,020.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-5401
제조사 부품 번호:: FP50R06W2E3BOMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	600V
	Number of Transistors	7
	Maximum Power Dissipation Pd	175W
	Maximum Collector Emitter Saturation Voltage VceSAT	1.9V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Length	51mm
	Height	12mm
	Width	42.5mm
	Series	FP50R06W2E3B
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 600V
	Number of Transistors 7
	Maximum Power Dissipation Pd 175W
	Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Length 51mm
	Height 12mm
	Width 42.5mm
	Series FP50R06W2E3B
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - FP50R06W2E3BOMA1

Infineon FP50R06W2E3B Series IGBT Module, 175W Maximum Power Dissipation, 600V Maximum Collector‑Emitter Voltage - FP50R06W2E3BOMA1

This IGBT module is a Compact power semiconductor assembly designed to switch and control high-voltage DC loads in industrial power systems. It provides robust switching capability for converters, inverters and motor drives while operating across a wide thermal range in demanding environments. The device is RoHS-compliant and intended for applications that require multiple transistor outputs within a single package.

Features and Benefits:

• 600 V collector-emitter rating enables high-voltage switching capability
• 175 W maximum power dissipation supports substantial continuous load handling
• 1.9 V maximum VCE(sat) reduces conduction losses during on-state operation
• Gate-emitter tolerance of 20 V permits standard gate-drive voltages
• Seven transistors in one package allow multi-channel switching arrangements

Applications

• Suitable for three-phase motor inverter stages requiring multiple switches
• Ideal for industrial DC-DC converters with high-voltage inputs
• Used with power rectifiers in medium-power traction systems
• Can be used for renewable-energy inverters handling variable loads
• Suitable for laboratory or test rigs needing clustered transistor outputs

What ambient temperatures can the device tolerate during operation?

It is rated to operate down to −40 °C and up to 150 °C.

What is the package footprint for integration on assemblies?

The unit measures 42.5 x 51 x 12 mm for Compact mounting and footprint planning.

How does the seven-transistor arrangement affect circuit layout?

Multiple transistors in one housing reduce interconnection length and simplify gate routing for multi-leg topologies.

Are there restrictions on automotive use?

The device is not specified to automotive standards and should not be relied upon for automotive-qualified designs.