제조사부품번호

Infineon IKW50N65EH5XKSA1, N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 226-6116
제조사 부품 번호:: IKW50N65EH5XKSA1
제조업체:: Infineon

Infineon IKW50N65EH5XKSA1, N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

대량 구매 할인 기용 가능

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Subtotal (1 tube of 30 units)*

₩186,660.00

150 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
30 - 120	₩6,222.00	₩186,660.00
150 +	₩5,600.00	₩168,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 226-6116
제조사 부품 번호:: IKW50N65EH5XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	80A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	275W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	30 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC
	Width	16.13mm
	Series	High Speed Fifth Generation
	Length	41.42mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 80A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 275W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 30 V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC
	Width 16.13mm
	Series High Speed Fifth Generation
	Length 41.42mm
	Automotive Standard No

Datasheet - IKW50N65EH5XKSA1

Infineon High Speed Fifth Generation Series IGBT, 650V Maximum Collector Emitter Voltage, 80A Max Continuous Collector Current - IKW50N65EH5XKSA1

This IGBT is a power semiconductor device designed to switch and control high-voltage, high-current loads in power electronic systems. It is intended for applications requiring a robust thermal range and significant continuous current handling, and is supplied in a through-hole TO-247 package suitable for conventional mounting and heatsinking.

Features and Benefits:

• 650V collector-emitter rating enables handling of high-voltage circuits
• 80A continuous collector current supports large load-driven applications
• 1.65V Vce(sat) reduces conduction losses during high current flow
• 275W power dissipation allows sustained thermal loading under duty
• 30V gate-emitter maximum permits strong gate-drive margins
• Operates from -40°C to 175°C for wide temperature environments

Applications

• Suitable for inverter stages in industrial drives
• Ideal for high-voltage power conversion modules
• Used with large motor controllers requiring high current
• Can be used for switch-mode power supplies in heavy-duty systems
• Suitable for rack-mounted power electronics with through-hole assembly

What package and mounting method does it use?

It is supplied in a TO-247 package and is designed for through-hole mounting.

What gating limits must I observe to avoid damage?

The gate-emitter voltage must not exceed 30V under any operating condition.

How does it perform in elevated ambient temperatures?

It is rated to operate up to 175°C, with specified power dissipation up to 275W to manage thermal load.

Is it suitable for automotive-standard designs?

It is not classified to automotive standards and should not be assumed compliant for those applications.