Infineon, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 226-6114
- 제조사 부품 번호:
- IKW40N65F5FKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩101,294.40
재고있음
- 630 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 120 | ₩3,376.48 | ₩101,311.32 |
| 150 + | ₩3,039.96 | ₩91,181.88 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 226-6114
- 제조사 부품 번호:
- IKW40N65F5FKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 255W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 42mm | |
| Height | 5.21mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 255W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 42mm | ||
Height 5.21mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IKW40N65F5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
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