Infineon, Type N-Channel IGBT, 62 A 650 V, 3-Pin TO-220, Through Hole

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RS 제품 번호:
226-6104
제조사 부품 번호:
IKP39N65ES5XKSA1
제조업체:
Infineon
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브랜드

Infineon

Maximum Continuous Collector Current Ic

62A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.85V

Maximum Operating Temperature

175°C

Series

IKP39N65ES5

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.45 V at 25°C

4 times Ic pulse current (100°C Tc)

Maximum junction temperature Tvj 175°C

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