제조사부품번호

Infineon 1ED44175N01BXTSA1, N-Channel IGBT Gate Driver IC, 11.9 A 11.4 V, 6-Pin SOT-23, Surface

RS 제품 번호:: 222-4757
제조사 부품 번호:: 1ED44175N01BXTSA1
제조업체:: Infineon

Infineon 1ED44175N01BXTSA1, N-Channel IGBT Gate Driver IC, 11.9 A 11.4 V, 6-Pin SOT-23, Surface

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 15 units)*

₩9,930.00

2,580 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
15 - 15	₩662.00	₩9,940.00
30 - 75	₩652.00	₩9,780.00
90 - 225	₩638.00	₩9,580.00
240 - 465	₩628.00	₩9,420.00
480 +	₩618.00	₩9,260.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4757
제조사 부품 번호:: 1ED44175N01BXTSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	11.9A
	Product Type	IGBT Gate Driver IC
	Maximum Collector Emitter Voltage Vceo	11.4V
	Maximum Power Dissipation Pd	500mW
	Package Type	SOT-23
	Mount Type	Surface
	Channel Type	N
	Pin Count	6
	Switching Speed	50ns
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Series	1ED44175N01B
	Standards/Approvals	JEDEC JESD47/22 and J-STD-020
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 11.9A
	Product Type IGBT Gate Driver IC
	Maximum Collector Emitter Voltage Vceo 11.4V
	Maximum Power Dissipation Pd 500mW
	Package Type SOT-23
	Mount Type Surface
	Channel Type N
	Pin Count 6
	Switching Speed 50ns
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Series 1ED44175N01B
	Standards/Approvals JEDEC JESD47/22 and J-STD-020
	Automotive Standard No

Datasheet - 1ED44175N01BXTSA1

Infineon 1ED44175N01B Series IGBT Gate Driver IC, 11.4V Max Collector Emitter Voltage, 11.9A Max Continuous Collector Current - 1ED44175N01BXTSA1

This IGBT gate driver IC is a surface-mounted control device designed to drive IGBT transistors in electronic power stages. It provides gate-drive capability for switching applications across a wide temperature range and is intended for Compact assemblies where a small package and fast switching are required.

Features and Benefits:

• 11.9 A continuous collector current delivers substantial drive capacity
• 20 V gate-emitter protection limits gate voltage excursions
• 11.4 V collector-emitter rating suits low-voltage transistor stages
• 50 ns switching speed enables Rapid transition control
• 500 mW power dissipation supports low-power thermal budgets
• SOT-23 package allows Compact surface-mount placement

Applications

• Suitable for low-voltage motor inverter gate stages
• Used for fast switching in power conversion modules
• Ideal for Compact drive boards with limited space
• Can be used for thermally demanding assemblies up to 150 °C
• Used with power transistors requiring gate-emitter protection

What ambient temperature range can it operate within?

It functions from −40 °C up to 150 °C.

How many pins does the device provide for PCB routing?

The device is supplied in a 6‑pin configuration for board placement.

What mounting style is required for integration?

It is intended for surface-mount assembly in a SOT-23 footprint.

Does the part comply with recognised thermal and moisture standards?

It meets JEDEC JESD47/22 and J-STD-020 qualifications.

What channel polarity does it present for gate control?

The device employs an N-type channel configuration.