Infineon IGB50N65H5ATMA1, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 218-4390
- 제조사 부품 번호:
- IGB50N65H5ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩26,578.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 245 | ₩5,315.70 | ₩26,578.50 |
| 250 - 495 | ₩5,183.10 | ₩25,915.50 |
| 500 + | ₩5,105.10 | ₩25,525.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-4390
- 제조사 부품 번호:
- IGB50N65H5ATMA1
- 제조업체:
- Infineon
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 270W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 270W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
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