Infineon, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole
- RS 제품 번호:
- 215-6662
- 제조사 부품 번호:
- IKP40N65H5XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩134,984.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 100 | ₩2,699.68 | ₩135,021.60 |
| 150 - 200 | ₩2,647.04 | ₩132,314.40 |
| 250 + | ₩2,594.40 | ₩129,682.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-6662
- 제조사 부품 번호:
- IKP40N65H5XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT in TRENCHSTOP TM 5 Technology | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT in TRENCHSTOP TM 5 Technology | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
관련된 링크들
- Infineon IKP40N65H5XKSA1, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole
- Infineon, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-220, Through Hole
- Infineon IKP40N65F5XKSA1, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-220, Through Hole
- Infineon IGBT Module, 30 A 650 V TO-220
- Infineon IKP15N65H5XKSA1 IGBT Module, 30 A 650 V TO-220
- Infineon IGBT, 55 A 650 V, 3-Pin 188, Through Hole
- Infineon IGBT Single Transistor IC, 28 A 650 V TO-220
- Infineon IKP30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin 188, Through Hole