Vishay SIA456DJ-T1-GE3, N-Channel IGBT, 6-Pin PowerPAK SC-70-6L, Surface

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포장 옵션
RS 제품 번호:
180-7793P
제조사 부품 번호:
SIA456DJ-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

IGBT

Maximum Power Dissipation Pd

19W

Package Type

PowerPAK SC-70-6L

Mount Type

Surface

Channel Type

N

Pin Count

6

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

16 V

Maximum Operating Temperature

150°C

Length

2.15mm

Width

1.6mm

Height

800μm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel SC-70-6 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 16V. It has a drain-source resistance of 1380mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 19W and continuous drain current of 2.6A. It has a minimum and a maximum driving voltage of 1.8V and 4.5V respectively. It has application in boost converter for portable devices. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Low on-resistance

• New thermally enhanced PowerPAK SC-70 package - Small footprint area

• Operating temperature ranges between -55°C and 150°C

• TrenchFET Power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

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