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ROHM RGT30NS65DGC9, Type P-Channel IGBT, 30 A 650 V, 4-Pin I2PAK, Through Hole

Name: ROHM RGT30NS65DGC9, Type P-Channel IGBT, 30 A 650 V, 4-Pin I2PAK, Through Hole
Brand: ROHM
SKU: 171-5593
Availability: InStock

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Subtotal (1 pack of 5 units)*

₩30,140.00

마지막 RS 재고

* 참고 가격: 실제 구매가격과 다를 수 있습니다

사양

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	ROHM
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	30A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	133W
	Number of Transistors	1
	Package Type	TO-262
	Mount Type	Through Hole
	Channel Type	Type P
	Pin Count	4
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	30 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS

	모두 선택
	브랜드 ROHM
	Product Type IGBT
	Maximum Continuous Collector Current Ic 30A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 133W
	Number of Transistors 1
	Package Type TO-262
	Mount Type Through Hole
	Channel Type Type P
	Pin Count 4
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 30 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Low Collector - Emitter Saturation Voltage

Low Switching Loss

Short Circuit Withstand Time 5us

Built in Very Fast & Soft Recovery FRD (RFN - Series)

Pb - free Lead Plating

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