Infineon FP35R12W2T4B11BOMA1, Type N-Channel IGBT Module, 54 A 1200 V, 35-Pin EASY2B, Clamp
- RS 제품 번호:
- 168-8771
- 제조사 부품 번호:
- FP35R12W2T4B11BOMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 Box of 15 units)*
₩1,167,790.20
일시적 품절
- 2026년 5월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Box* |
|---|---|---|
| 15 - 15 | ₩77,852.68 | ₩1,167,780.80 |
| 30 - 45 | ₩76,296.04 | ₩1,144,431.20 |
| 60 + | ₩74,769.48 | ₩1,121,532.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 168-8771
- 제조사 부품 번호:
- FP35R12W2T4B11BOMA1
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 54A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 215W | |
| Package Type | EASY2B | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 35 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 48 mm | |
| Height | 12mm | |
| Length | 56.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 54A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 215W | ||
Package Type EASY2B | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 35 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 48 mm | ||
Height 12mm | ||
Length 56.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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