Infineon FP35R12W2T7B11BOMA1, Type N-Channel IGBT, 35 A 1200 V, 31-Pin AG-EASY2B, Through Hole
- RS 제품 번호:
- 222-4800
- 제조사 부품 번호:
- FP35R12W2T7B11BOMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩71,891.20
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩71,891.20 |
| 10 - 99 | ₩70,086.40 |
| 100 - 249 | ₩68,338.00 |
| 250 - 499 | ₩66,965.60 |
| 500 + | ₩65,630.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4800
- 제조사 부품 번호:
- FP35R12W2T7B11BOMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 35A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | AG-EASY2B | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Width | 48 mm | |
| Series | FP35R12W2T7-B11 | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Length | 56.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 35A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type AG-EASY2B | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 31 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Width 48 mm | ||
Series FP35R12W2T7-B11 | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Length 56.7mm | ||
Automotive Standard No | ||
The Infineon EasyPIM™ 2B 1200 V, 35 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology.
Low VCEsat
TRENCHSTOP™ IGBT7
Overload operation up to 175°C
2.5 kV AC 1min insulation
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
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