IXYS IXXK110N65B4H1, N-Channel IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- RS 제품 번호:
- 168-4588
- 제조사 부품 번호:
- IXXK110N65B4H1
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 받기
50개 더 담고 ₩56,600.00 할인 받기
View bulk pricing optionsSubtotal (1 tube of 25 units)*
₩942,600.00
일시적 품절
- 250 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* | 절감 |
|---|---|---|---|
| 25 - 25 | ₩37,704.00 | ₩942,580.00 | - |
| 50 - 75 | ₩36,572.00 | ₩914,300.00 | ₩56,600.00 |
| 100 + | ₩35,476.00 | ₩886,880.00 | ₩222,800.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 168-4588
- 제조사 부품 번호:
- IXXK110N65B4H1
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Maximum Continuous Collector Current Ic | 570A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Trench | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Energy Rating | 3mJ | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Maximum Continuous Collector Current Ic 570A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series Trench | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Energy Rating 3mJ | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- IXYS IXXK110N65B4H1, N-Channel IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- IXYS IXXK100N60C3H1, N-Channel IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole
- IXYS, N-Channel high Speed IGBT, 100 A 1.2 kV, 3-Pin TO-264, Through Hole
- IXYS IXXH80N65B4H1, N-Channel IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- IXYS, N-Channel high Speed IGBT, 82 A 1.2 kV, 3-Pin PLUS264, Through Hole
- IXYS IXYK100N120C3, N-Channel high Speed IGBT, 100 A 1.2 kV, 3-Pin TO-264, Through Hole
- IXYS IXYB82N120C3H1, N-Channel high Speed IGBT, 82 A 1.2 kV, 3-Pin PLUS264, Through Hole
- IXYS HiperFET, Polar3 N-Channel MOSFET, 110 A, 600 V Enhancement, 3-Pin PLUS264 IXFB110N60P3