IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- RS 제품 번호:
- 125-8049
- 제조사 부품 번호:
- IXXH80N65B4H1
- 제조업체:
- IXYS
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩19,664.80
마지막 RS 재고
- 최종적인 1 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩19,664.80 |
| 8 - 14 | ₩19,176.00 |
| 15 + | ₩18,875.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 125-8049
- 제조사 부품 번호:
- IXXH80N65B4H1
- 제조업체:
- IXYS
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Maximum Continuous Collector Current | 430 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 625 W | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 5 → 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.1 x 5.2 x 21.3mm | |
| Energy Rating | 5.2mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Maximum Continuous Collector Current 430 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 625 W | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 5 → 30kHz | ||
Transistor Configuration Single | ||
Dimensions 16.1 x 5.2 x 21.3mm | ||
Energy Rating 5.2mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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