IXYS IXXH80N65B4H1, N-Channel IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 IGBTs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
RS 제품 번호:
125-8049
Distrelec 제품 번호:
302-53-437
제조사 부품 번호:
IXXH80N65B4H1
제조업체:
IXYS
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

IXYS

Product Type

IGBT

Maximum Continuous Collector Current Ic

430A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

625W

Package Type

TO-247AD

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

175°C

Series

Trench

Standards/Approvals

No

Automotive Standard

No

Energy Rating

5.2mJ

COO (Country of Origin):
PH

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

관련된 링크들