IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole
- RS 제품 번호:
- 125-8050
- 제조사 부품 번호:
- IXXK100N60C3H1
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 unit)*
₩31,358.40
재고있음
- 추가로 2026년 1월 19일 부터 41 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 + | ₩31,358.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 125-8050
- 제조사 부품 번호:
- IXXK100N60C3H1
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 695 W | |
| Package Type | TO-264 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 20 → 60kHz | |
| Transistor Configuration | Single | |
| Dimensions | 20.3 x 5.3 x 26.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Energy Rating | 600mJ | |
| Minimum Operating Temperature | -55 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 695 W | ||
Package Type TO-264 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 20 → 60kHz | ||
Transistor Configuration Single | ||
Dimensions 20.3 x 5.3 x 26.6mm | ||
Maximum Operating Temperature +150 °C | ||
Energy Rating 600mJ | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole
- IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole
- IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
- IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin SOT-227B, Surface Mount
- IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole
- IXYS Type N-Channel MOSFET, 64 A, 600 V Enhancement, 3-Pin TO-264 IXFK64N60P3
- IXYS Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264 IXFK48N60Q3