Infineon, Type N-Channel IGBT Module, 105 A 1200 V AG-ECONO3-3, Clamp
- RS 제품 번호:
- 166-0895
- 제조사 부품 번호:
- FP75R12KE3BOSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tray of 10 units)*
₩1,652,120.00
일시적 품절
- 2028년 7월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 10 - 10 | ₩165,212.00 | ₩1,652,120.00 |
| 20 - 30 | ₩161,906.00 | ₩1,619,060.00 |
| 40 + | ₩158,670.00 | ₩1,586,700.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-0895
- 제조사 부품 번호:
- FP75R12KE3BOSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 105A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 355W | |
| Package Type | AG-ECONO3-3 | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Switching Speed | 0.26μs | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 125°C | |
| Width | 62mm | |
| Length | 122mm | |
| Standards/Approvals | RoHS | |
| Height | 17mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 105A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 355W | ||
Package Type AG-ECONO3-3 | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Switching Speed 0.26μs | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 125°C | ||
Width 62mm | ||
Length 122mm | ||
Standards/Approvals RoHS | ||
Height 17mm | ||
Automotive Standard No | ||
해당 안됨
- COO (Country of Origin):
- MY
Infineon IGBT Module, 1200V Max Collector Emitter Voltage, 105A Max Continuous Collector Current - FP75R12KE3BOSA1
This IGBT module is a power semiconductor device designed to switch and control high-voltage DC in industrial converter and inverter environments. It combines insulated-gate control with high-voltage capability to support power conversion tasks across a broad operating temperature range, and is supplied in a clamp-mount package suitable for secure mechanical attachment.
Features and Benefits:
• 1200V rating enables high-voltage switching in power stages
• 105A continuous collector current for sustained load handling
• 355W maximum dissipation supports elevated power throughput
• 2.2V Vce(sat) minimises conduction losses under load
• 0.26μs switching speed reduces transition losses during switching
• ±20V gate-emitter limit ensures robust gate drive tolerance
• 105A continuous collector current for sustained load handling
• 355W maximum dissipation supports elevated power throughput
• 2.2V Vce(sat) minimises conduction losses under load
• 0.26μs switching speed reduces transition losses during switching
• ±20V gate-emitter limit ensures robust gate drive tolerance
Applications
• Suitable for 1200V IGBT module for inverters in industrial drives
• Ideal for high-power IGBT 355W converter assemblies
• Used for 105A collector current IGBT motor control systems
• Can be used for clamp-mount IGBT module power racks
• Used with non-automotive power electronics and traction testbeds
• Ideal for high-power IGBT 355W converter assemblies
• Used for 105A collector current IGBT motor control systems
• Can be used for clamp-mount IGBT module power racks
• Used with non-automotive power electronics and traction testbeds
What ambient temperatures can the device tolerate during operation?
It operates correctly across a wide temperature window from -40°C to 125°C, enabling use in demanding thermal environments.
How does the package affect mounting and serviceability?
The clamp-style mounting arrangement provides firm attachment and straightforward replacement without specialised fasteners.
What electrical polarity and channel type does it use?
The device is an N-channel IGBT suitable for conventional collector-emitter switching topologies.
Are there restrictions on gate drive voltage during use?
The gate-emitter voltage must be kept within ±20V to prevent gate-oxide stress and ensure reliable switching.
관련된 링크들
- Infineon FP75R12KE3BOSA1, Type N-Channel IGBT Module, 105 A 1200 V AG-ECONO3-3, Clamp
- Infineon, Type N-Channel IGBT Module, 200 A 1200 V AG-ECONO3-4, Clamp
- Infineon FS150R12KE3BOSA1, Type N-Channel IGBT Module, 200 A 1200 V AG-ECONO3-4, Clamp
- Infineon Full Bridge IGBT, 105 A 1200 V AG-ECONO2B-311, Chassis
- Infineon 3 Phase IGBT, 55 A 1200 V AG-ECONO2C-311, Chassis
- Infineon 3 Phase IGBT, 25 A 1200 V AG-ECONO2C-311, Chassis
- Infineon FS75R12KE3BPSA1 Full Bridge IGBT, 105 A 1200 V AG-ECONO2B-311, Chassis
- Infineon FP40R12KE3BPSA1 3 Phase IGBT, 55 A 1200 V AG-ECONO2C-311, Chassis
