제조사부품번호

Infineon FP75R12KE3BOSA1, N-Channel IGBT Module, 105 A 1.2 kV AG-ECONO3-3, Clamp

RS 제품 번호:: 166-0895
제조사 부품 번호:: FP75R12KE3BOSA1
제조업체:: Infineon

Infineon FP75R12KE3BOSA1, N-Channel IGBT Module, 105 A 1.2 kV AG-ECONO3-3, Clamp

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RS 제품 번호:: 166-0895
제조사 부품 번호:: FP75R12KE3BOSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	105A
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	355W
	Package Type	AG-ECONO3-3
	Mount Type	Clamp
	Channel Type	N
	Switching Speed	0.26μs
	Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Width	62mm
	Standards/Approvals	RoHS
	Height	17mm
	Length	122mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 105A
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 355W
	Package Type AG-ECONO3-3
	Mount Type Clamp
	Channel Type N
	Switching Speed 0.26μs
	Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Width 62mm
	Standards/Approvals RoHS
	Height 17mm
	Length 122mm
	Automotive Standard No

해당 안됨

COO (Country of Origin):: MY

Infineon IGBT Module, 1200V Max Collector Emitter Voltage, 105A Max Continuous Collector Current - FP75R12KE3BOSA1

This IGBT module is a power semiconductor device designed to switch and control high-voltage DC in industrial converter and inverter environments. It combines insulated-gate control with high-voltage capability to support power conversion tasks across a broad operating temperature range, and is supplied in a clamp-mount package suitable for secure mechanical attachment.

Features and Benefits:

• 1200V rating enables high-voltage switching in power stages
• 105A continuous collector current for sustained load handling
• 355W maximum dissipation supports elevated power throughput
• 2.2V Vce(sat) minimises conduction losses under load
• 0.26μs switching speed reduces transition losses during switching
• ±20V gate-emitter limit ensures robust gate drive tolerance

Applications

• Suitable for 1200V IGBT module for inverters in industrial drives
• Ideal for high-power IGBT 355W converter assemblies
• Used for 105A collector current IGBT motor control systems
• Can be used for clamp-mount IGBT module power racks
• Used with non-automotive power electronics and traction testbeds

What ambient temperatures can the device tolerate during operation?

It operates correctly across a wide temperature window from -40°C to 125°C, enabling use in demanding thermal environments.

How does the package affect mounting and serviceability?

The clamp-style mounting arrangement provides firm attachment and straightforward replacement without specialised fasteners.

What electrical polarity and channel type does it use?

The device is an N-channel IGBT suitable for conventional collector-emitter switching topologies.

Are there restrictions on gate drive voltage during use?

The gate-emitter voltage must be kept within ±20V to prevent gate-oxide stress and ensure reliable switching.