Infineon FP75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V AG-ECONO3-3, Panel Mount

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₩181,476.40

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  • 2027년 12월 01일 부터 배송
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3 - 4₩176,926.80
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RS 제품 번호:
111-6095
제조사 부품 번호:
FP75R12KE3BOSA1
제조업체:
Infineon
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브랜드

Infineon

Maximum Continuous Collector Current

105 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

355 W

Configuration

3 Phase Bridge

Package Type

AG-ECONO3-3

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-40 °C

해당 안됨

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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