IXYS IXGP20N120B3, Type N-Channel IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

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RS 제품 번호:
146-1730
제조사 부품 번호:
IXGP20N120B3
제조업체:
IXYS
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브랜드

IXYS

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

1200V

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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