IXYS IXGH30N120B3D1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 192-641
- Distrelec 제품 번호:
- 302-53-414
- 제조사 부품 번호:
- IXGH30N120B3D1
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩19,401.60
재고있음
- 319 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩19,401.60 |
| 8 - 14 | ₩18,931.60 |
| 15 + | ₩18,612.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 192-641
- Distrelec 제품 번호:
- 302-53-414
- 제조사 부품 번호:
- IXGH30N120B3D1
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 160ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | Mid-Frequency | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 160ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Series Mid-Frequency | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- IXYS IXGH40N120B2D1, Type N-Channel IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS, Type N-Channel IGBT, 100 A 1200 V, 3-Pin PLUS247, Through Hole
- IXYS, Type N-Channel IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- IXYS, Type N-Channel high Speed IGBT, 100 A 1200 V, 3-Pin PLUS247, Through Hole
- IXYS, Type N-Channel IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole
- IXYS, Type N-Channel IGBT, 120 A 1200 V, 3-Pin PLUS247, Through Hole
- IXYS IXYX120N120C3, Type N-Channel IGBT, 120 A 1200 V, 3-Pin PLUS247, Through Hole