Infineon IKQ75N120CH7XKSA1, Type N-Channel IGBT 1200 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole
- RS 제품 번호:
- 284-672
- 제조사 부품 번호:
- IKQ75N120CH7XKSA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 284-672
- 제조사 부품 번호:
- IKQ75N120CH7XKSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 549W | |
| Package Type | PG-TO-247-3-PLUS-N | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 549W | ||
Package Type PG-TO-247-3-PLUS-N | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IGBT with high speed 1200 V trench stop IGBT 7 technology is designed to deliver unparalleled performance in demanding applications. It features a state of the ART design that combines efficient power handling with low switching losses, making it Ideal for high efficiency power converters. With its robust co packing of a full rated current, soft commutating Rapid diode, and an optimised thermal performance, this device is tailored for industrial and automotive applications, including EV charging and welding systems. Offering a maximum junction temperature of 175°C, this product ensures reliability and longevity, even under extreme conditions.
Optimized for high efficiency in hard switching
Pb free lead plating for environmental compliance
Easy paralleling with positive temperature coefficient
Well suited for industrial applications like UPS and inverters
Comprehensive product spectrum with modelling support
Delivers low saturation voltage for energy savings
Transient gate emitter voltages improve switching performance
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