ROHM RGT8BM65DGTL1, Type N-Channel IGBT, 8 A 650 V, 3-Pin TO-252GE, Surface
- RS 제품 번호:
- 265-325
- 제조사 부품 번호:
- RGT8BM65DGTL1
- 제조업체:
- ROHM
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 10 units)*
₩24,360.00
재고있음
- 추가로 2026년 8월 31일 부터 2,490 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 10 - 90 | ₩2,436.00 | ₩24,360.00 |
| 100 - 240 | ₩2,316.00 | ₩23,160.00 |
| 250 + | ₩2,144.00 | ₩21,440.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 265-325
- 제조사 부품 번호:
- RGT8BM65DGTL1
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Maximum Continuous Collector Current Ic | 8A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 62W | |
| Package Type | TO-252GE | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Series | RFN | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Maximum Continuous Collector Current Ic 8A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 62W | ||
Package Type TO-252GE | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Series RFN | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The ROHM IGBT contribute to energy saving high efficiency and a wide range of high voltage and high current applications. The IGBT features a low collector to emitter saturation voltage, making it highly efficient for various applications. It offers a short circuit withstand time of 5 microseconds, ensuring robust performance under fault conditions. Additionally, it is equipped with a built in very fast and soft recovery fast recovery diode from the RFN series.
Low Switching Loss
Pb free lead plating
RoHS compliant
관련된 링크들
- ROHM RGT40TS65DGC13 IGBT, 20 A 650 V, 3-Pin TO-247GE, Through Hole
- ROHM RGT50TS65DGC13 IGBT, 20 A 650 V, 3-Pin TO-247GE, Through Hole
- ROHM RGT00TS65DGC13 IGBT, 50 A 650 V, 3-Pin TO-247GE, Through Hole
- ROHM RGT80TS65DGC13 IGBT, 40 A 650 V, 3-Pin TO-247GE, Through Hole
- ROHM RGT60TS65DGC13 IGBT, 30 A 650 V, 3-Pin TO-247GE, Through Hole
- ROHM IGBT, 20 A 650 V, 3-Pin TO-247GE, Through Hole
- ROHM IGBT, 50 A 650 V, 3-Pin TO-247GE, Through Hole
- ROHM IGBT, 40 A 650 V, 3-Pin TO-247GE, Through Hole
