Infineon IRS2308STRPBF MOSFET Gate Driver, 600 mA 8-Pin 600 V, SOIC
- RS 제품 번호:
- 258-4014
- 제조사 부품 번호:
- IRS2308STRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩3,139.60
재고있음
- 2,480 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩1,569.80 | ₩3,139.60 |
| 10 - 98 | ₩1,419.40 | ₩2,838.80 |
| 100 - 248 | ₩1,306.60 | ₩2,613.20 |
| 250 - 498 | ₩1,137.40 | ₩2,274.80 |
| 500 + | ₩1,052.80 | ₩2,105.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-4014
- 제조사 부품 번호:
- IRS2308STRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Output Current | 600mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Rise Time | 220ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | IRS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Output Current 600mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Rise Time 220ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series IRS | ||
Automotive Standard No | ||
The Infineon half bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Floating channel designed for bootstrap operation
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
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