Infineon IRS2008STRPBF, Gate Driver, 600 mA 8-Pin 200 V, SOIC
- RS 제품 번호:
- 258-4003
- 제조사 부품 번호:
- IRS2008STRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩6,166.40
일시적 품절
- 2025년 12월 29일 부터 1,810 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩1,233.28 | ₩6,166.40 |
| 10 - 95 | ₩1,101.68 | ₩5,508.40 |
| 100 - 245 | ₩1,015.20 | ₩5,076.00 |
| 250 - 495 | ₩861.04 | ₩4,305.20 |
| 500 + | ₩804.64 | ₩4,023.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-4003
- 제조사 부품 번호:
- IRS2008STRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 600mA | |
| Pin Count | 8 | |
| Fall Time | 30ns | |
| Package Type | SOIC | |
| Driver Type | Gate Driver | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 25V | |
| Maximum Supply Voltage | 200V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | IRS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver Module | ||
Output Current 600mA | ||
Pin Count 8 | ||
Fall Time 30ns | ||
Package Type SOIC | ||
Driver Type Gate Driver | ||
Rise Time 170ns | ||
Minimum Supply Voltage 25V | ||
Maximum Supply Voltage 200V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series IRS | ||
Automotive Standard No | ||
The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVICs use in high frequency applications.
Gate drive supplies up to 20 V per channel
Under voltage lockout for VCC, VBS
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set dead time
High-side output in phase with input
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