Renesas Electronics HIP2100IBZT7A, Half Bridge 2, 2 A 8-Pin 14 V, SOIC

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Subtotal (1 pack of 2 units)*

₩11,956.80

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한팩당
한팩당*
2 - 8₩5,978.40₩11,956.80
10 - 18₩5,376.80₩10,753.60
20 - 98₩5,264.00₩10,528.00
100 - 198₩4,399.20₩8,798.40
200 +₩4,305.20₩8,610.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
256-1548
제조사 부품 번호:
HIP2100IBZT7A
제조업체:
Renesas Electronics
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브랜드

Renesas Electronics

Product Type

Gate Driver Module

Output Current

2A

Pin Count

8

Package Type

SOIC

Fall Time

10ns

Number of Outputs

2

Driver Type

Half Bridge

Rise Time

10ns

Minimum Supply Voltage

9V

Maximum Supply Voltage

14V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Height

1.75mm

Series

HIP2100

Length

5mm

Width

4 mm

Mount Type

Board

Automotive Standard

No

The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.

Drives N-channel MOSFET half bridge

Pb-free (RoHS compliant)

Bootstrap supply max voltage to 114VDC

On-chip 1Ω bootstrap diode

Fast propagation times for multi-MHz circuits

Drives 1000pF load with rise and fall times typ of 10ns

CMOS input thresholds for improved noise immunity

Low Power Consumption

Wide Supply Range

Supply Under voltage Protection

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