Renesas Electronics HIP2100IBZT7A, Half Bridge 2, 2 A 8-Pin 14 V, SOIC
- RS 제품 번호:
- 256-1548
- 제조사 부품 번호:
- HIP2100IBZT7A
- 제조업체:
- Renesas Electronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩11,956.80
마지막 RS 재고
- 최종적인 244 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩5,978.40 | ₩11,956.80 |
| 10 - 18 | ₩5,376.80 | ₩10,753.60 |
| 20 - 98 | ₩5,264.00 | ₩10,528.00 |
| 100 - 198 | ₩4,399.20 | ₩8,798.40 |
| 200 + | ₩4,305.20 | ₩8,610.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 256-1548
- 제조사 부품 번호:
- HIP2100IBZT7A
- 제조업체:
- Renesas Electronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 2A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 10ns | |
| Number of Outputs | 2 | |
| Driver Type | Half Bridge | |
| Rise Time | 10ns | |
| Minimum Supply Voltage | 9V | |
| Maximum Supply Voltage | 14V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Series | HIP2100 | |
| Length | 5mm | |
| Width | 4 mm | |
| Mount Type | Board | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 2A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 10ns | ||
Number of Outputs 2 | ||
Driver Type Half Bridge | ||
Rise Time 10ns | ||
Minimum Supply Voltage 9V | ||
Maximum Supply Voltage 14V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Series HIP2100 | ||
Length 5mm | ||
Width 4 mm | ||
Mount Type Board | ||
Automotive Standard No | ||
The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.
Drives N-channel MOSFET half bridge
Pb-free (RoHS compliant)
Bootstrap supply max voltage to 114VDC
On-chip 1Ω bootstrap diode
Fast propagation times for multi-MHz circuits
Drives 1000pF load with rise and fall times typ of 10ns
CMOS input thresholds for improved noise immunity
Low Power Consumption
Wide Supply Range
Supply Under voltage Protection
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