Renesas Electronics HIP2210FRTZ-T7A, Half Bridge 2, 4 A 10-Pin 18 V, TDFN
- RS 제품 번호:
- 250-6591
- 제조사 부품 번호:
- HIP2210FRTZ-T7A
- 제조업체:
- Renesas Electronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 3 units)*
₩8,854.80
마지막 RS 재고
- 최종적인 48 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 3 - 27 | ₩2,951.60 | ₩8,854.80 |
| 30 - 72 | ₩2,656.44 | ₩7,971.20 |
| 75 - 297 | ₩2,506.04 | ₩7,520.00 |
| 300 + | ₩2,156.36 | ₩6,467.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 250-6591
- 제조사 부품 번호:
- HIP2210FRTZ-T7A
- 제조업체:
- Renesas Electronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 4A | |
| Pin Count | 10 | |
| Fall Time | 365ns | |
| Package Type | TDFN | |
| Driver Type | Half Bridge | |
| Number of Outputs | 2 | |
| Rise Time | 435ns | |
| Minimum Supply Voltage | 6V | |
| Maximum Supply Voltage | 18V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 3 mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Series | HIP2210 | |
| Length | 3.80mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 4A | ||
Pin Count 10 | ||
Fall Time 365ns | ||
Package Type TDFN | ||
Driver Type Half Bridge | ||
Number of Outputs 2 | ||
Rise Time 435ns | ||
Minimum Supply Voltage 6V | ||
Maximum Supply Voltage 18V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Width 3 mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Series HIP2210 | ||
Length 3.80mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Renesas 100 V, 3 A source, 4 A sink high-frequency half-bridge NMOS FET driver belongs to HIP2210 series. This driver has 10 pin configuration. It features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6 V to 18 V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.
115 VDC bootstrap supply maximum voltage supports 100 V on the half-bridge
Fast propagation delay and matching : 15ns typical delay, 2 ns typical matching (HIP2211)
Integrated 0.5 Ω typical bootstrap diode
Wide 6 V to 18 V operating voltage range
VDD and boot Undervoltage Lockout (UVLO)
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