STMicroelectronics MOSFET Gate Driver 3, 600 mA 28-Pin 78V, SOIC

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Subtotal 125 units (supplied in a tray)*

₩341,000.00

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  • 2027년 1월 11일 부터 배송
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125 - 240₩2,728.00
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포장 옵션
RS 제품 번호:
210-8289P
제조사 부품 번호:
STDRIVE101
제조업체:
STMicroelectronics
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모두 선택

브랜드

STMicroelectronics

Product Type

Gate Driver

Output Current

600mA

Pin Count

28

Package Type

SOIC

Fall Time

120ns

Driver Type

MOSFET

Rise Time

120ns

Minimum Supply Voltage

-0.3V

Number of Drivers

3

Maximum Supply Voltage

78V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Length

4.15mm

Standards/Approvals

No

Height

1mm

Mount Type

Surface

Automotive Standard

No

The STDRIVE101 is a low voltage gate driver suitable for driving three-phase brushless motors.

It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs. Each driver has a current capability of 600 mA (sink/source). It integrates a low drop linear regulator generating the supply voltage for both low-side and high-side gate drivers through a bootstrap circuitry.

The device provides Under Voltage Lock Out (UVLO) on both the low-side and high-side sections, preventing the power switches from operating in low efficiency or dangerous conditions.

The control logic integrated into the STDRIVE101 allows two input strategies (high-side and low-side or enable and PWM driving signals). The driving method is selected according to DT/MODE pin. In both cases, prevention from cross conduction is ensured by interlocking or internally generated deadtime.

The STDRIVE101 also features a VDS monitoring protection for each external MOSFET, thermal shutdown and can be put in the standby mode to reduce the power consumption.

The device is available in a VFQFPN 4x4 24 leads package option.

Operating voltage from 5.5 to 75 V

600 mA sink/source current capability

3.3 V and 5 V control logic

Two input strategies:

  • ENx/INx with adjustable deadtime generation

  • INHx/INLx with interlocking

    • Matched propagation delay for all channels

    Very short propagation delay: 40 ns

    Integrated bootstrap diodes

    12 V LDO linear regulator (50 mA max.)

    Embedded VDS monitor for each external MOSFET

    Overcurrent comparator

    UVLO and thermal shutdown protection

    Standby mode for low current consumption operation

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