Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25C160B-GTR
- RS 제품 번호:
- 215-5780
- 제조사 부품 번호:
- FM25C160B-GTR
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 tube of 2500 units)*
₩4,958,500.00
일시적 품절
- 2026년 9월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 2500 - 2500 | ₩1,983.40 | ₩4,958,970.00 |
| 5000 - 7500 | ₩1,943.92 | ₩4,859,800.00 |
| 10000 + | ₩1,904.44 | ₩4,762,510.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-5780
- 제조사 부품 번호:
- FM25C160B-GTR
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 5ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 2 K | |
| Number of Bits per Word | 8bit | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Minimum Operating Temperature | -40 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 5ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 2 K | ||
Number of Bits per Word 8bit | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Supply Voltage 4.5 V | ||
Minimum Operating Temperature -40 °C | ||
The Cypress Semiconductor FM25C160B is a 16-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories.
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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