The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.

4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process

수량	한팩당
625 - 1245	₩2,560.56
1250 +	₩2,506.04

모두 선택	제품 정보	값
	브랜드	Infineon
	Memory Size	4kbit
	Organisation	512 x 8
	Interface Type	I2C
	Data Bus Width	8bit
	Maximum Random Access Time	10ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	4.97 x 3.98 x 1.48mm
	Length	4.97mm
	Width	3.98mm
	Maximum Operating Supply Voltage	5.5 V
	Height	1.48mm
	Maximum Operating Temperature	+85 °C
	Automotive Standard	AEC-Q100
	Number of Bits per Word	8bit
	Number of Words	512
	Minimum Operating Supply Voltage	4.5 V
	Minimum Operating Temperature	-40 °C

	모두 선택
	브랜드 Infineon
	Memory Size 4kbit
	Organisation 512 x 8
	Interface Type I2C
	Data Bus Width 8bit
	Maximum Random Access Time 10ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 4.97 x 3.98 x 1.48mm
	Length 4.97mm
	Width 3.98mm
	Maximum Operating Supply Voltage 5.5 V
	Height 1.48mm
	Maximum Operating Temperature +85 °C
	Automotive Standard AEC-Q100
	Number of Bits per Word 8bit
	Number of Words 512
	Minimum Operating Supply Voltage 4.5 V
	Minimum Operating Temperature -40 °C

Infineon 4kbit I2C FRAM Memory 8-Pin SOIC, FM24C04B-GTR

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