제조사부품번호

Infineon 1 MB SPI FRAM 8-Pin SOIC

RS 제품 번호:: 188-5424
제조사 부품 번호:: FM25VN10-G
제조업체:: Infineon

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 97 units)*

₩1,949,975.48

재고있음

291 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
97 - 97	₩20,102.84	₩1,949,956.68
194 - 291	₩19,499.36	₩1,891,456.72
388 +	₩18,914.68	₩1,834,705.16

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-5424
제조사 부품 번호:: FM25VN10-G
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	FRAM
	Memory Size	1MB
	Organisation	128K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	18ns
	Maximum Clock Frequency	40MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Length	4.97mm
	Width	3.98 mm
	Standards/Approvals	No
	Height	1.47mm
	Maximum Operating Temperature	85°C
	Minimum Operating Temperature	-40°C
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2V
	Automotive Standard	AEC-Q100
	Number of Bits per Word	8
	Number of Words	128k

	모두 선택
	브랜드 Infineon
	Product Type FRAM
	Memory Size 1MB
	Organisation 128K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 18ns
	Maximum Clock Frequency 40MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Length 4.97mm
	Width 3.98 mm
	Standards/Approvals No
	Height 1.47mm
	Maximum Operating Temperature 85°C
	Minimum Operating Temperature -40°C
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2V
	Automotive Standard AEC-Q100
	Number of Bits per Word 8
	Number of Words 128k

Datasheet FM25VN10-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 1 MB SPI FRAM 8-Pin SOIC

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

관련된 링크들