Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC
- RS 제품 번호:
- 125-4209P
- 제조사 부품 번호:
- FM24C64B-G
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal 24 units (supplied in a tube)*
₩102,873.60
재고있음
- 1,856 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 24 - 46 | ₩4,286.40 |
| 48 + | ₩4,201.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 125-4209P
- 제조사 부품 번호:
- FM24C64B-G
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 64kB | |
| Interface Type | 2 Wire I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 550ns | |
| Maximum Clock Frequency | 1MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Height | 1.38mm | |
| Length | 4.97mm | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 4.5V | |
| Number of Words | 8K | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type FRAM | ||
Memory Size 64kB | ||
Interface Type 2 Wire I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 550ns | ||
Maximum Clock Frequency 1MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Height 1.38mm | ||
Length 4.97mm | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 4.5V | ||
Number of Words 8K | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.