제조사부품번호

Infineon 128 kB SPI FRAM 8-Pin SOIC, FM25V01A-G

RS 제품 번호:: 124-2985
제조사 부품 번호:: FM25V01A-G
제조업체:: Infineon

Infineon 128 kB SPI FRAM 8-Pin SOIC, FM25V01A-G

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩15,265.60

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
2 - 22	₩7,632.80	₩15,265.60
24 - 46	₩7,463.60	₩14,927.20
48 +	₩7,303.80	₩14,607.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 124-2985
제조사 부품 번호:: FM25V01A-G
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	FRAM
	Memory Size	128kB
	Organisation	16k x 8 Bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mount Type	Surface
	Maximum Clock Frequency	40MHz
	Package Type	SOIC
	Pin Count	8
	Standards/Approvals	No
	Width	3.98 mm
	Length	4.97mm
	Height	1.38mm
	Maximum Operating Temperature	85°C
	Minimum Operating Temperature	-40°C
	Number of Words	16k
	Number of Bits per Word	8
	Minimum Supply Voltage	2V
	Maximum Supply Voltage	3.6V
	Automotive Standard	AEC-Q100

	모두 선택
	브랜드 Infineon
	Product Type FRAM
	Memory Size 128kB
	Organisation 16k x 8 Bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mount Type Surface
	Maximum Clock Frequency 40MHz
	Package Type SOIC
	Pin Count 8
	Standards/Approvals No
	Width 3.98 mm
	Length 4.97mm
	Height 1.38mm
	Maximum Operating Temperature 85°C
	Minimum Operating Temperature -40°C
	Number of Words 16k
	Number of Bits per Word 8
	Minimum Supply Voltage 2V
	Maximum Supply Voltage 3.6V
	Automotive Standard AEC-Q100

FM25V01A-G Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 128 kB SPI FRAM 8-Pin SOIC, FM25V01A-G

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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