Infineon NOR 256 MB CFI Flash Memory 64-Pin BGA, S29GL256P11FFIV20
- RS 제품 번호:
- 193-8867
- 제조사 부품 번호:
- S29GL256P11FFIV20
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩33,130.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 44 | ₩16,565.25 | ₩33,130.50 |
| 46 - 88 | ₩16,204.50 | ₩32,409.00 |
| 90 + | ₩15,853.50 | ₩31,707.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 193-8867
- 제조사 부품 번호:
- S29GL256P11FFIV20
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 256MB | |
| Product Type | Flash Memory | |
| Interface Type | CFI | |
| Package Type | BGA | |
| Pin Count | 64 | |
| Mount Type | Surface | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 13mm | |
| Maximum Random Access Time | 110ns | |
| Number of Words | 32M | |
| Number of Bits per Word | 8 | |
| Supply Current | 110mA | |
| Series | S29GL256P | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 256MB | ||
Product Type Flash Memory | ||
Interface Type CFI | ||
Package Type BGA | ||
Pin Count 64 | ||
Mount Type Surface | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 13mm | ||
Maximum Random Access Time 110ns | ||
Number of Words 32M | ||
Number of Bits per Word 8 | ||
Supply Current 110mA | ||
Series S29GL256P | ||
Automotive Standard No | ||
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.
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