Infineon NOR 64 MB CFI Flash Memory 48-Pin BGA, S29GL064S70BHI030

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Subtotal (1 pack of 5 units)*

₩31,715.60

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한팩당
한팩당*
5 - 80₩6,343.12₩31,715.60
85 - 165₩6,204.00₩31,020.00
170 +₩6,072.40₩30,362.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
193-8826
제조사 부품 번호:
S29GL064S70BHI030
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Memory Size

64MB

Product Type

Flash Memory

Interface Type

CFI

Package Type

BGA

Pin Count

48

Organisation

8M x 8 Bit

Mount Type

Surface

Cell Type

NOR

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Timing Type

Asynchronous

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

No

Length

8.15mm

Height

0.84mm

Width

6.15 mm

Number of Bits per Word

8

Supply Current

50mA

Maximum Random Access Time

70ns

Automotive Standard

AEC-Q100

Number of Words

8K

Series

S29GL064S

The S29GL-S mid density family of devices are 3.0-volt single-power flash memory manufactured using 65 nm MirrorBit technology.

The S29GL064S is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices have 16bit wide data bus only, or a 16bit wide data bus that can also function as an 8bit wide data bus by using the BYTE# input.

The devices can be programmed either in the host system or in standard EPROM programmers. Access times as fast as 70 ns are available. Package offerings include 48pin TSOP, 56pin TSOP, 48-ball fine-pitch BGA, and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0-volt power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature is supported through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate system production. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

The Advanced Sector Protection features several levels of sector protection, which can disable both the program and erase operations in certain sectors.

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