Infineon NOR 8 MB CFI Flash Memory 48-Pin TSOP, S29AL008J70TFI013

Image representative of range

View all Flash Memory
Bulk discount available

Subtotal (1 pack of 5 units)*

₩18,010.40

Add to Basket
Select or type quantity
마지막 RS 재고
  • 최종적인 970 개 unit(s)이 배송 준비 됨
Units
Per unit
Per Pack*
5 - 245₩3,602.08₩18,010.40
250 - 495₩3,523.12₩17,615.60
500 +₩3,444.16₩17,220.80

*price indicative

Packaging Options:
RS Stock No.:
193-8785
Mfr. Part No.:
S29AL008J70TFI013
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

브랜드

Infineon

Product Type

Flash Memory

Memory Size

8MB

Interface Type

CFI

Package Type

TSOP

Pin Count

48

Organisation

1M x 8 Bit

Mount Type

Surface

Cell Type

NOR

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Timing Type

Asynchronous

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

No

Width

12 mm

Length

12mm

Height

1.05mm

Series

S29AL008J

Maximum Random Access Time

70ns

Supply Current

20mA

Number of Bits per Word

8

Number of Words

1M

Automotive Standard

AEC-Q100

COO (Country of Origin):
TH
The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch) and 48pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. Duringerase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

Related links