Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA

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Subtotal 53 units (supplied in a tray)*

₩2,621,989.50

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53 - 104₩49,471.50
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포장 옵션
RS 제품 번호:
188-2657P
제조사 부품 번호:
W29N08GZBIBA
제조업체:
Winbond
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모두 선택

브랜드

Winbond

Memory Size

8GB

Product Type

Flash Memory

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Maximum Clock Frequency

40MHz

Mount Type

Surface

Cell Type

SLC NAND

Minimum Supply Voltage

1.7V

Maximum Supply Voltage

1.95V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

No

Height

0.6mm

Length

11.1mm

Maximum Random Access Time

25μs

Number of Words

1024K

Automotive Standard

No

Number of Bits per Word

8

Series

W29N08GZ

COO (Country of Origin):
TW
Density : 8Gbit (2 chip stacked solution)

Vcc : 1.7V to 1.95V

Bus width : x8/x16

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 8G-bit/1G-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 35ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 13mA(typ.)

Program/Erase: 13mA(typ.)

CMOS standby: 20uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

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