Infineon NOR 256 MB SPI Flash Memory 16-Pin SOIC

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RS 제품 번호:
177-5266
제조사 부품 번호:
S25FL256SAGMFI001
제조업체:
Infineon
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브랜드

Infineon

Product Type

Flash Memory

Memory Size

256MB

Interface Type

SPI

Package Type

SOIC

Pin Count

16

Organisation

256M x 1 bit

Maximum Clock Frequency

133MHz

Mount Type

Surface

Cell Type

NOR

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Timing Type

Synchronous

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Length

10.3mm

Width

7.5mm

Standards/Approvals

No

Height

2.55mm

Number of Bits per Word

4

Maximum Random Access Time

14.5ns

Automotive Standard

AEC-Q100

Number of Words

128M, 256M, 64M

Series

S25FL256S

Infineon S25FL256S Series Flash Memory, 256MB Memory Size, 2.7V Minimum Supply Voltage - S25FL256SAGMFI001


This flash memory is a high-density serial NOR device designed for systems requiring non-volatile storage in demanding environments. It interfaces over SPI and operates across a wide industrial temperature range, making it suitable for embedded applications in automotive and industrial electronics where persistent programme and data storage is needed.

Features and Benefits:


• Supports 133MHz clock enabling faster data transfers
• Operates from 2.7V to 3.6V to suit varied power rails
• Provides 256MB capacity with 128M words for large storage
• Offers 14.5ns random access time to reduce latency
• Implements 4-bit-per-word organisation for efficient data layout
• Complies with AEC-Q100 for automotive-grade reliability

Applications


• Suitable for firmware storage in automotive ECUs
• Used for industrial control systems with wide temperature ranges
• Ideal for boot code and file system storage in embedded devices
• Can be used for high-speed data logging in vehicles
• Used with microcontrollers requiring SPI NOR non-volatile memory

What packaging does it come in for PCB assembly?


It is supplied in a 16-pin SOIC surface-mount package measuring 7.5mm width by 10.3mm length and 2.55mm height suitable for automated placement.

Which timing characteristic affects read performance most?


The synchronous timing and a maximum random access time of 14.5ns determine how quickly individual locations can be accessed during read cycles.

What organisation and cell type does the device use?


The memory uses a NOR cell architecture with a 256M x1 organisation and 4 bits stored per word to structure storage and access.

How many memory density variants are available?


The family includes 64M, 128M and 256M word-count variants offering different capacity options for design scaling.

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