Winbond NAND 1 GB Serial Flash Memory 8-Pin WSON
- RS 제품 번호:
- 171-2218P
- 제조사 부품 번호:
- W25N01GVZEIG/TUBE
- 제조업체:
- Winbond
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- RS 제품 번호:
- 171-2218P
- 제조사 부품 번호:
- W25N01GVZEIG/TUBE
- 제조업체:
- Winbond
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Winbond | |
| Memory Size | 1GB | |
| Product Type | Flash Memory | |
| Interface Type | Serial | |
| Package Type | WSON | |
| Pin Count | 8 | |
| Organisation | 128M x 8 bit | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 104MHz | |
| Cell Type | NAND | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 6.1mm | |
| Width | 8mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 7ns | |
| Number of Words | 128M | |
| Supply Current | 35mA | |
| Automotive Standard | No | |
| Series | W25N01GV | |
| 모두 선택 | ||
|---|---|---|
브랜드 Winbond | ||
Memory Size 1GB | ||
Product Type Flash Memory | ||
Interface Type Serial | ||
Package Type WSON | ||
Pin Count 8 | ||
Organisation 128M x 8 bit | ||
Mount Type Surface | ||
Maximum Clock Frequency 104MHz | ||
Cell Type NAND | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 6.1mm | ||
Width 8mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 7ns | ||
Number of Words 128M | ||
Supply Current 35mA | ||
Automotive Standard No | ||
Series W25N01GV | ||
1Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default
Vcc: 2.7V to 3.6V
Bus width: x1/x2/x4
Operating temperature: Industrial: -40°C to 85°C
Single-Level Cell (SLC) Technology
Density: 1G-bit/128M-byte
Page size: 2,112 bytes (2048 + 64 bytes)
Block size: 64 pages (128K + 4K bytes)
Page read with ECC enable: 50us
SPI clocks: 104MHz
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Support OTP memory area
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