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Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PDIP, SST39SF040-70-4C-PHE

RS 제품 번호:: 352-119
제조사 부품 번호:: SST39SF040-70-4C-PHE
제조업체:: Microchip

Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PDIP, SST39SF040-70-4C-PHE

Subtotal (1 unit)*

₩8,347.20

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150 개 단위 배송 준비 완료

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 352-119
제조사 부품 번호:: SST39SF040-70-4C-PHE
제조업체:: Microchip

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Microchip
	Memory Size	4MB
	Product Type	Flash Memory
	Interface Type	Parallel
	Package Type	PDIP
	Pin Count	32
	Organisation	4M x 8
	Cell Type	Split Gate
	Maximum Supply Voltage	5.5V
	Minimum Supply Voltage	4.5V
	Timing Type	Automatic Write Timing
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Length	1.65in
	Height	0.2in
	Width	0.55 in
	Standards/Approvals	RoHS Compliant
	Supply Current	25mA
	Series	Multi-Purpose Flash
	Maximum Random Access Time	55.70ns
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Memory Size 4MB
	Product Type Flash Memory
	Interface Type Parallel
	Package Type PDIP
	Pin Count 32
	Organisation 4M x 8
	Cell Type Split Gate
	Maximum Supply Voltage 5.5V
	Minimum Supply Voltage 4.5V
	Timing Type Automatic Write Timing
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Length 1.65in
	Height 0.2in
	Width 0.55 in
	Standards/Approvals RoHS Compliant
	Supply Current 25mA
	Series Multi-Purpose Flash
	Maximum Random Access Time 55.70ns
	Automotive Standard No

Datasheet - SST39SF040-70-4C-PHE

The Microchip CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 writes (Program or Erase) with a 4.5 to 5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

Superior reliability with 100000 cycles endurance typical

Greater than 100 years data retention

Low power consumption at 14 MHz

Active current 10 mA typical

Standby current 30 μA typical

Sector-erase capability with uniform 4 Kbyte sectors

Fast read access time 55 ns and 70 ns

Latched address and data

Automatic write timing with internal VPP generation

Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PDIP, SST39SF040-70-4C-PHE

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