Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PDIP, SST39SF040-70-4C-PHE
- RS 제품 번호:
- 352-119
- 제조사 부품 번호:
- SST39SF040-70-4C-PHE
- 제조업체:
- Microchip
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- RS 제품 번호:
- 352-119
- 제조사 부품 번호:
- SST39SF040-70-4C-PHE
- 제조업체:
- Microchip
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | Flash Memory | |
| Memory Size | 4MB | |
| Interface Type | Parallel | |
| Package Type | PDIP | |
| Pin Count | 32 | |
| Organisation | 4M x 8 | |
| Cell Type | Split Gate | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Supply Voltage | 4.5V | |
| Timing Type | Automatic Write Timing | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 0.55in | |
| Length | 1.65in | |
| Height | 0.2in | |
| Automotive Standard | No | |
| Supply Current | 25mA | |
| Maximum Random Access Time | 55.70ns | |
| Series | Multi-Purpose Flash | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type Flash Memory | ||
Memory Size 4MB | ||
Interface Type Parallel | ||
Package Type PDIP | ||
Pin Count 32 | ||
Organisation 4M x 8 | ||
Cell Type Split Gate | ||
Maximum Supply Voltage 5.5V | ||
Minimum Supply Voltage 4.5V | ||
Timing Type Automatic Write Timing | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS Compliant | ||
Width 0.55in | ||
Length 1.65in | ||
Height 0.2in | ||
Automotive Standard No | ||
Supply Current 25mA | ||
Maximum Random Access Time 55.70ns | ||
Series Multi-Purpose Flash | ||
The Microchip CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 writes (Program or Erase) with a 4.5 to 5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.
Superior reliability with 100000 cycles endurance typical
Greater than 100 years data retention
Low power consumption at 14 MHz
Active current 10 mA typical
Standby current 30 μA typical
Sector-erase capability with uniform 4 Kbyte sectors
Fast read access time 55 ns and 70 ns
Latched address and data
Automatic write timing with internal VPP generation
관련된 링크들
- Microchip Split Gate 2 MB Parallel Flash Memory 32-Pin PDIP, SST39SF020A-70-4C-PHE
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- Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39SF040-55-4I-NHE
- Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39SF040-70-4I-NHE
- Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC
- Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39VF040-70-4I-NHE
- Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39LF040-55-4C-NHE
- Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39VF040-70-4C-NHE
