Microchip, 64 kB Parallel EEPROM, 70 ns 32-Pin PLCC Parallel
- RS 제품 번호:
- 177-1902P
- 제조사 부품 번호:
- AT28HC64B-70JU
- 제조업체:
- Microchip
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 8 units (supplied in a tube)*
₩88,240.00
재고있음
- 154 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 8 - 14 | ₩11,030.00 |
| 16 + | ₩10,808.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 177-1902P
- 제조사 부품 번호:
- AT28HC64B-70JU
- 제조업체:
- Microchip
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | Parallel EEPROM | |
| Memory Size | 64kB | |
| Interface Type | Parallel | |
| Package Type | PLCC | |
| Mount Type | Surface | |
| Pin Count | 32 | |
| Maximum Clock Frequency | 5MHz | |
| Organisation | 8K x 8 bit | |
| Minimum Supply Voltage | 4.5V | |
| Maximum Supply Voltage | 5.5V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Series | AT28HC64B | |
| Standards/Approvals | No | |
| Width | 15mm | |
| Length | 12.5mm | |
| Automotive Standard | No | |
| Maximum Random Access Time | 70ns | |
| Supply Current | 40mA | |
| Data Retention | 10year | |
| Number of Words | 8192 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type Parallel EEPROM | ||
Memory Size 64kB | ||
Interface Type Parallel | ||
Package Type PLCC | ||
Mount Type Surface | ||
Pin Count 32 | ||
Maximum Clock Frequency 5MHz | ||
Organisation 8K x 8 bit | ||
Minimum Supply Voltage 4.5V | ||
Maximum Supply Voltage 5.5V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Series AT28HC64B | ||
Standards/Approvals No | ||
Width 15mm | ||
Length 12.5mm | ||
Automotive Standard No | ||
Maximum Random Access Time 70ns | ||
Supply Current 40mA | ||
Data Retention 10year | ||
Number of Words 8192 | ||
The Microchip AT28HC64B is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
8 Kbits x 8 (64 Kbit)
5 V ±10% Supply
Parallel Interface
70ns access time
Self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
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