Microchip, 256 kB Parallel EEPROM, 120 ns 32-Pin PLCC Parallel
- RS 제품 번호:
- 177-1707P
- 제조사 부품 번호:
- AT28HC256-12JU
- 제조업체:
- Microchip
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 8 units (supplied in a tube)*
₩160,704.00
재고있음
- 60 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 8 - 15 | ₩20,088.00 |
| 16 + | ₩19,686.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 177-1707P
- 제조사 부품 번호:
- AT28HC256-12JU
- 제조업체:
- Microchip
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | Parallel EEPROM | |
| Memory Size | 256kB | |
| Interface Type | Parallel | |
| Package Type | PLCC | |
| Mount Type | Surface | |
| Pin Count | 32 | |
| Maximum Clock Frequency | 5MHz | |
| Organisation | 32K x 8 bit | |
| Minimum Supply Voltage | 4.5V | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Series | AT28HC256 | |
| Width | 15mm | |
| Length | 12.5mm | |
| Standards/Approvals | No | |
| Height | 3.5mm | |
| Data Retention | 10year | |
| Maximum Random Access Time | 120ns | |
| Supply Current | 80mA | |
| Automotive Standard | No | |
| Number of Words | 32768 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type Parallel EEPROM | ||
Memory Size 256kB | ||
Interface Type Parallel | ||
Package Type PLCC | ||
Mount Type Surface | ||
Pin Count 32 | ||
Maximum Clock Frequency 5MHz | ||
Organisation 32K x 8 bit | ||
Minimum Supply Voltage 4.5V | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Series AT28HC256 | ||
Width 15mm | ||
Length 12.5mm | ||
Standards/Approvals No | ||
Height 3.5mm | ||
Data Retention 10year | ||
Maximum Random Access Time 120ns | ||
Supply Current 80mA | ||
Automotive Standard No | ||
Number of Words 32768 | ||
- COO (Country of Origin):
- TW
The Microchip AT28HC256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 70ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 5mA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
32 Kbits x 8 (256 Kbit)
5V ± 10% Supply
Parallel Interface
150ns access time
self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 200 μA (Max)
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