Infineon RF Bipolar Transistor, 40 mA NPN, 4.5 V, 4-Pin SOT-343
- RS 제품 번호:
- 273-7298
- 제조사 부품 번호:
- BFP410H6327XTSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 25 units)*
₩13,950.00
재고있음
- 추가로 2026년 10월 19일 부터 2,725 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 25 | ₩558.00 | ₩13,940.00 |
| 50 - 75 | ₩546.00 | ₩13,660.00 |
| 100 - 225 | ₩510.00 | ₩12,760.00 |
| 250 - 975 | ₩470.00 | ₩11,760.00 |
| 1000 + | ₩462.00 | ₩11,540.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7298
- 제조사 부품 번호:
- BFP410H6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum DC Current Gain hFE | 60 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Transition Frequency ft | 25GHz | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum DC Current Gain hFE 60 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Transition Frequency ft 25GHz | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a low noise device based on a grounded emitter that is part of Infineon established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for high frequency oscillators. It remains cost competitive without compromising on ease of use.
High gain
Minimum noise figure
Suitable for broadband low noise amplifiers
LNAs for sub 1 GHz ISM band applications
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