Infineon BFP182WH6327XTSA1 Bipolar Transistor, 35 mA, 12 V, 4-Pin SOT-343
- RS 제품 번호:
- 273-2847
- 제조사 부품 번호:
- BFP182WH6327XTSA1
- 제조업체:
- Infineon
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현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 273-2847
- 제조사 부품 번호:
- BFP182WH6327XTSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 12V | |
| Package Type | SOT-343 | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 12V | ||
Package Type SOT-343 | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
The Infineon NPN silicon RF transistor for low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 m.
Pb free package
It has application in wireless communications
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