Infineon BFR460L3E6327XTMA1 RF Bipolar Transistor, 50 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS 제품 번호:
- 261-3958
- Distrelec 제품 번호:
- 304-41-647
- 제조사 부품 번호:
- BFR460L3E6327XTMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩23,692.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 50 | ₩473.85 | ₩23,673.00 |
| 100 - 100 | ₩458.25 | ₩22,951.50 |
| 150 + | ₩444.60 | ₩22,269.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-3958
- Distrelec 제품 번호:
- 304-41-647
- 제조사 부품 번호:
- BFR460L3E6327XTMA1
- 제조업체:
- Infineon
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Maximum Transition Frequency ft | 22GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 1mm | |
| Standards/Approvals | RoHS | |
| Series | BFR | |
| Height | 0.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Maximum Transition Frequency ft 22GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 1mm | ||
Standards/Approvals RoHS | ||
Series BFR | ||
Height 0.4mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
High ESD performance
High gain with minimum noise figure
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