Infineon Bipolar Transistor, 80 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS 제품 번호:
- 258-6998
- 제조사 부품 번호:
- BFR380L3E6327XTMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 15000 units)*
₩3,214,800.00
재고있음
- 15,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 15000 - 30000 | ₩214.32 | ₩3,214,800.00 |
| 45000 + | ₩210.56 | ₩3,149,940.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-6998
- 제조사 부품 번호:
- BFR380L3E6327XTMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 380mW | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Width | 0.6 mm | |
| Standards/Approvals | RoHS | |
| Series | BFR380L3 | |
| Height | 0.4mm | |
| Length | 1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 380mW | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Width 0.6 mm | ||
Standards/Approvals RoHS | ||
Series BFR380L3 | ||
Height 0.4mm | ||
Length 1mm | ||
Automotive Standard No | ||
The Infineon low profile linear silicon NPN RF bipolar transistor is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its high transition frequency and low current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
High current capability and low noise figure for wide dynamic range
Low voltage operation
Pb free RoHS compliant package
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