onsemi FDMA420NZ Digital Transistor, 6-Pin MicroFET 2 x 2

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET lead frame.

RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A
RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A
Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm
HBM ESD protection level 2.5k V typical (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications.

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