onsemi Transistor, 10 A NPN, 400 V, 3-Pin TO-220

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 Bipolar Transistors 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
포장 옵션
RS 제품 번호:
186-8032P
제조사 부품 번호:
BUL45D2G
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

10A

Maximum Collector Emitter Voltage Vceo

400V

Package Type

TO-220

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

700V dc

Transistor Polarity

NPN

Maximum Transition Frequency ft

1MHz

Minimum DC Current Gain hFE

7

Maximum Emitter Base Voltage VEBO

12V dc

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

75W

Maximum Operating Temperature

150°C

Pin Count

3

Length

10.53mm

Height

15.75mm

Width

4.83mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Low Base Drive Requirement

High Peak DC Current Gain (55 Typical) @ IC = 100 mA

Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

Integrated Collector-Emitter Free Wheeling Diode

Fully Characterized and Guaranteed Dynamic VCE(sat)

"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads

Pb-Free Package is Available

관련된 링크들