onsemi BUL45D2G Transistor, 10 A NPN, 400 V, 3-Pin TO-220
- RS 제품 번호:
- 186-8032
- 제조사 부품 번호:
- BUL45D2G
- 제조업체:
- onsemi
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RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 186-8032
- 제조사 부품 번호:
- BUL45D2G
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 400V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 700V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum DC Current Gain hFE | 7 | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Emitter Base Voltage VEBO | 12V dc | |
| Transistor Polarity | NPN | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Length | 10.53mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 400V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 700V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum DC Current Gain hFE 7 | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Emitter Base Voltage VEBO 12V dc | ||
Transistor Polarity NPN | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Length 10.53mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
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