onsemi Transistor, 10 A NPN, 400 V, 3-Pin TO-220
- RS 제품 번호:
- 186-7374
- 제조사 부품 번호:
- BUL45D2G
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 186-7374
- 제조사 부품 번호:
- BUL45D2G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 400V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 700V dc | |
| Maximum Emitter Base Voltage VEBO | 12V dc | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 7 | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Power Dissipation Pd | 75W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.75mm | |
| Length | 10.53mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 400V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 700V dc | ||
Maximum Emitter Base Voltage VEBO 12V dc | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 7 | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Power Dissipation Pd 75W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 15.75mm | ||
Length 10.53mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
관련된 링크들
- onsemi BUL45D2G Transistor, 10 A NPN, 400 V, 3-Pin TO-220
- STMicroelectronics Transistor, 4 A NPN, 400 V, 3-Pin TO-220
- STMicroelectronics BUL128D-B Transistor, 4 A NPN, 400 V, 3-Pin TO-220
- STMicroelectronics Transistor, 5 A NPN, 400 V, 3-Pin TO-220
- onsemi Transistor, 8 A NPN, 400 V, 3-Pin TO-220
- STMicroelectronics BUL138 Transistor, 5 A NPN, 400 V, 3-Pin TO-220
- onsemi Digital Transistor, 400 V NPN Through Hole TO-220, 3-Pin
- onsemi MJE13007G Transistor, 8 A NPN, 400 V, 3-Pin TO-220